Abstract

Titanium dioxide TiO2 thin films have been prepared by APCVD method using TiCl4 as a precursor. The surface morphology of the films deposited was investigated by scanning electron microscopy (SEM). The ellipsometry was used to determinate the refractive index of the films deposited at 490°C and the resistivity was obtained using Hall effect measurement. Transmittance of TiO2 films deposited on ITO was measured by UV–visible spectroscopy.TiO2 films which are prepared during 5min present a resistivity of 4.2×10−4Ωcm, a transmittance higher than 80% and a refractive index of 1,8. These films can be used as interfacial layer in organic solar cells application to minimize the reflectivity and improve solar cells efficiency. Increasing in short-circuit courant density (Jsc) and efficiency (η) parameters is observed with the insertion of the TiO2 interfacial layer after the first annealing.

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