Abstract
Lead‐free (K0.5Na0.5)NbO3 (KNN) thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol–gel processing method, and titanium diffusion from the substrates into the KNN films under different thermal treatment conditions were investigated by the secondary ion mass spectroscopy depth profile and X‐ray photoelectron spectroscopy surface analysis. Titanium diffusion was evident in all the KNN thin films, which was further aggravated not only by increasing the annealing temperature, but also surprisingly by higher ramping rate attributed to the resulting larger grain boundaries. The pronounced effects of the titanium diffusion and the resulting substitution of Ti4+ for Nb5+ with different valence states on the composition, structure, and electrical properties of the KNN thin films are analyzed and discussed. The results showed that the Ti diffusion from the substrate played a crucial role in affecting the structure and electrical properties of the ferroelectric KNN thin films deposited on Pt/Ti/SiO2/Si substrate.
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