Abstract
High dielectric constant TiSiOx thin films are produced by reactive sputtering under different oxygen partial pressure ratio (PO2) from 15% to 30%. All the TiSiOx films show an excellent transmittance value of almost 95%. The TiSiOx film has a low leakage current density by optimizing oxygen partial pressure, and the leakage current density of TiSiOx film under PO2 of 20% is 4.88×10−7A/cm2 at electrical field strength of 2MV/cm. Meanwhile, their associated InGaZnO thin-film transistors (IGZO-TFTs) with different PO2 TiSiOx thin films as gate insulators are fabricated. IGZO-TFTs under PO2 of 20% shows an optimized electrical performance, and the threshold voltage, sub-threshold swing, field effect mobility and Ion/Ioff ratio of this device are 2.22V, 0.33V/decade, 29.3cm2/V s and 5.03×107, respectively. Moreover, the density of states (DOS) is calculated by temperature-dependent field-effect measurement. The enhancements of electrical performance and temperature stability are attributed to better active/insulator interface and smaller DOS.
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