Abstract
Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) have been examined for an Al nanocluster periodic array grown on $p$-type silicon substrate. Local density of states at Al and Si sites within the nanocluster has been extracted from site-resolved STS spectra by taking into account tip-induced band bending (TIBB) effect. Besides, it has been clarified that the surface-potential-energy shift caused by TIBB effect directly influences the tunneling current spectra. Consequently, a good correspondence has been found between the experimental spectra and the theoretical local density of states except for the energy gap. The energy gap has been experimentally determined as 1.7 eV, which is much larger than the predicted value. This discrepancy could be ascribed to the local-density approximation rather than the TIBB effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
