Abstract

Tip-enhanced Rayleigh scattering images of Ge quantum dots grown on Si substrate have been observed. Changing the wavelength of the incidence light, the contrast of the images is reversed. It is found that the scattering intensity depends strongly on dielectric constants of materials under the probe. Tip-enhanced photoluminescence of In 0.3 Ga 0.7 N films has also been reported. The strong local enhancement of the photoluminescence of the localized excitons has been observed in the vicinity of a silver nano-particle attached to the end of the probe.

Full Text

Published Version

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.