Tip-Enhanced Raman Scattering of the Local Nanostructure of Epitaxial Graphene Grown on 4H-SiC (0001̅)

Abstract

Step, ridge, and crack submicro/nanostructures of epitaxial graphene on 4H-SiC (0001̅) were characterized using tip-enhanced Raman scattering (TERS) spectroscopy. The nanostructures were created during graphene synthesis due to a difference in the thermal expansion coefficient of graphene and SiC. These structures are a distinctive property of epitaxial graphene, together with other desirable properties, such as large graphene sheet and minimal defects. The results of this study illustrate that the exceptional spatial resolution of TERS allows spectroscopic measurements of individual nanostructures, a feat which normal Raman spectroscopy is not capable of. By analyzing TERS spectra, the change of local strain on the nanoridge and decreased graphene content in the submicrometer crack were detected. Using G′ band positions in the TERS spectra, the strain difference between the ridge center and flat area was calculated to be 1.6 × 10–3 and 5.8 × 10–4 for uniaxial and biaxial strain, respectively. This confirms the proposed mechanism in previous researches that nanoridges on epitaxial graphene form as a relief against compressive strain. With this study, we demonstrate that TERS is a powerful technique for the characterization of individual local nanostructures on epitaxial graphene.