Abstract
Relative humidity (RH) is a critical environmental variable for transportation and storage of products and for the quality guarantee of several other production processes and services. Heterogeneous structures prepared from the selective semiconductor oxides may improve the sensitivity to humidity due to the better electronic and surface properties, when compared to pristine oxides. This work shows an alternative fabrication route for producing titanium dioxide/tungsten trioxide (TiO2/WO3) heterogeneous structures (by electrospinning and sintering) for potential application on the RH detection. The microstructural properties of the materials were analyzed by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), X-ray diffraction, and Raman spectroscopy. The electrical characterization of the structures was performed by electrical impedance spectroscopy in RH range of 10%–100%. Results indicated a p- to n-type conduction transition at around 30%–40% RH for all tested settings. The analysis of the impedance signature to humidity showed that the amount of fiber layers on the electrode and working temperature are important parameters to improve the humidity sensing of the TiO2/WO3 systems.
Highlights
IntroductionIn the last years, increasing interest has been devoted to the study of metal oxide semiconductors for use as sensors, photocatalysts, and energy conversion devices due to the electronic properties, excellent chemical stability, and high surface area to volume ratio [1,2]
In the last years, increasing interest has been devoted to the study of metal oxide semiconductors for use as sensors, photocatalysts, and energy conversion devices due to the electronic properties, excellent chemical stability, and high surface area to volume ratio [1,2].The chemisorbed and physisorbed layers of water molecules on the semiconductor surface and the capillaryAnatase titanium dioxide ( TiO2 ) (~3.2 eV bandgap) is one of the most used metal oxides in Relative humidity (RH) sensors
The results indicated that the 1/1 in mole configuration preserves the phases of components and improves the electrical conduction process of the system over pure TiO2 and WO3 particles, which favors the humidity sensing
Summary
In the last years, increasing interest has been devoted to the study of metal oxide semiconductors for use as sensors, photocatalysts, and energy conversion devices due to the electronic properties, excellent chemical stability, and high surface area to volume ratio [1,2]. Anatase titanium dioxide ( TiO2 ) (~3.2 eV bandgap) is one of the most used metal oxides in RH sensors. This oxide is non-toxic with a high chemical stability and an excellent combination of photoactivity and www.springer.com/journal/40145. Selective semiconductors including zinc oxide ( ZnO ), vanadium pentoxide ( V2O5 ), niobium pentoxide ( Nb2O5 ), and tungsten trioxide ( WO3 ) have been incorporated to TiO2 to improve structural properties and sensitivity to RH [1,3,9,10]. The results indicated that the 1/1 in mole configuration preserves the phases of components and improves the electrical conduction process of the system over pure TiO2 and WO3 particles, which favors the humidity sensing
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