Abstract
In this study, pH sensors were successfully fabricated on a fluorine-doped tin oxide substrate and grown via hydrothermal methods for 8 h for pH sensing characteristics. The morphology was obtained by high-resolution scanning electron microscopy and showed randomly oriented flower-like nanostructures. The TiO2 nanoflower pH sensors were measured over a pH range of 2–12. Results showed a high sensitivity of the TiO2 nano-flowers pH sensor, 2.7 (μA)1/2/pH, and a linear relationship between IDS and pH (regression of 0.9991). The relationship between voltage reference and pH displayed a sensitivity of a 46 mV/pH and a linear regression of 0.9989. The experimental result indicated that a flower-like TiO2 nanostructure extended gate field effect transistor (EGFET) pH sensor effectively detected the pH value.
Highlights
The pH value, which is defined as the negative logarithm of hydrogen ion concentration, is a standardized scale for determining whether a solution is alkaline or acidic
Different from ion-sensitive field-effect transistor (ISFET), extended gate field effect transistor (EGFET) has an independent layer structure fabricated on the end of the signal line extended from the field-effect transistor gate electrode
PH sensors were successfully fabricated on fluorine-doped tin oxide (FTO) substrate and grown via hydrothermal methods
Summary
The pH value, which is defined as the negative logarithm of hydrogen ion concentration, is a standardized scale for determining whether a solution is alkaline or acidic. A pH meter commonly uses glass electrodes, which are costly and fragile, proving difficult to maintain On this basis, two types of typical sensing components are available. Different from ISFET, EGFET has an independent layer structure fabricated on the end of the signal line extended from the field-effect transistor gate electrode. The independent layer mostly uses metal oxide as a sensing membrane, which can attract the hydrogen ions in the solution. Coatings 2019, 9, 251 its relatively simple structure; (3) the sensing film can be switched; and (4) there is no light interference [5] Metal oxides, such as ZnO, CuO, SnO2 , and WO3 have been widely used as sensing films in numerous studies [6,7,8,9]. The device performance and the material analysis are discussed
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