Abstract
HighlightsDeveloping a universal strategy of the p–n homojunction engineering that could significantly boost electron mobility of electron transport layer (ETL) by two orders of magnitude.Proposing a new mechanism based on p–n homojunction to explain inhibited carrier loss at buried interface.Setting a new performance benchmark as high as 25.50% for planar perovskite solar cells employing TiO2 as ETLs.
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