Abstract
Perovskite oxide films exhibiting dielectric, ferroelectric and piezoelectric characteristics have various electronic applications. Traditionally, syntheses of perovskite oxide films by anodic oxidation often require metals as seeding layers. In our past work, conductive nitride films have been employed as the seeding layer. The objective of this study is to prepare BaTiO3 films on TiNcoated silicon substrates by a hydrothermal-electrochemical treatment (i.e. anodic oxidation) at temperatures below 100℃. Preparation of BaTiO3 on Ti/Si substrates was also conducted for comparison. X-ray diffraction results showed that cubic BaTiO3 films were successfully formed on the TiN/Si substrates by anodic oxidation using a potentiostatic mode with an applied potential of 1 V at 70℃ for 5 min. Field-emission scanning electron microscopy revealed that BaTiO3 films exhibited a sphere-like morphology, and spherical BaTiO3 was observed after the anodic oxidation reaction at an applied potential of 2 V for 3 min. The thickness of BaTiO3 increased with the potential as well as the reaction temperature. The growth of BaTiO3 on TiN was much faster than that over the Ti film, and the thickness of BaTiO3 could reach 1 μm. The differences were associated with growth mechanisms that are discussed in this work.
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