Abstract
Ti film was deposited on an Mo substrate, a TiN film was then deposited on it, using a reactive vacuum arc deposition with a droplet shield plate located between the Ti cathode and the substrate. Substrate temperature during the process was decreased as the shield plate was moved closer to the substrate. Deposition rates of Ti and TiN/Ti films with the shield plate were less than half to a quarter of those without the shield plate. The crystalline structure of the film prepared with the shield plate did not significantly differ from that prepared without the shield plate and was independent of the plate position. The number of droplets on the film was drastically reduced when the shield plate was located farther from the substrate, but an unacceptable number of droplets remained on the film when the shield plate was located closer to the substrate.
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