Abstract
Transparent conductive tin oxide (TO, SnO2) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol% O3. The properties of TO films have been changed with the gas flow rate (oxygen, oxygen containing ozone) and the substrate temperature. The use of oxygen containing ozone instead of pure oxygen reduced substrate temperature significantly and the resistivity while maintaining the same growth rate. The films prepared using ozone showed resistivity ranging from 10-2 to 10-3 Ωcm, and ranging mobility from 10.5 to 13.7 cm2/Vs.
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