Abstract
A new tin-gold technique has been used to apply planar ohmic contacts to n -type GaAs in order to develop planar bulk GaAs oscillators. The contacts have shown ohmic contact characteristics and provided sufficient mechanical strength for device fabrication. However, the characteristics of the planar devices studied were considerably different from those of conventional sandwich devices. Average threshold fields for spontaneous oscillations were as high as 13,600 V/cm instead of about 300 V/cm for sandwich devices. This paper describes a method of preparation of the contact and presents some preliminary characteristics of planar devices. Nonuniform field effects are briefly discussed to explain the characteristics of planar devices. Some recommendations are given of improving device characteristics.
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