Abstract
Abstract The binary rare-earth metal silicides RESi1.7 (RE = Dy, Ho) were prepared by tin flux synthesis between 800–1000 °C. Single crystals were obtained after electrochemical dissolving of molten ingots. Their crystal structures were determined from single-crystal X-ray data: orthorhombic symmetry, space group Imm2; unit cell parameters a = 19.144(1), b = 8.2562(3), c = 6.6571(3) Å and a = 19.063(1), b = 8.2120(2), c = 6.6313(2) Å for DySi1.7 and HoSi1.7, respectively. They represent a new ordered structure type, which is a derivative of the defect AlB2 type. The main structural feature is the occurrence of a vacancy ordering in the two-dimensional planar network of silicon atoms, leading to rows of edge-shared twelve-membered rings separated by distorted hexagonal rings. Structural comparison with the parent hexagonal silicide Yb3Si5 (Th3Pd5 type), the structure of which has been re-determined on single crystal, is also given.
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