Abstract
AbstractPaper presents results of investigation aimed at the development of tin dioxide nanodimensional film gas sensors (NDFGS) with high sensitivity to hydrogen. Specifics of the performed research consist in the approach based on the combination of utilization nanodimensional metal oxide film, as gas sensitive element of device, and group electron technology methods that allows to arranging from small to large scale manufacturing of given NDFGS.Gas sensitive nanodimensional film (NDF) had been formatted by means of chemical spray pyrolysis method on the both ceramic substrate for study and optimization of electrophysical and gas sensitive characteristics and “chip” of gas sensor (GS) preliminarily produced through group electron technology. Films were deposited at the temperatures in interval 400-500°C from water solutions of SnCl4.5H2O precursor. The thickness of SnO2 films was varied in the range 40-80 nm.Study of electrophysical characteristics of obtained layers has shown that the last one possess resistance on the level 105-106 Ohm/ at the working temperatures of GS. Gas sensitivity was determined as ratio of SnO2 film resistance in the pure air and in the presence of gas impurity in atmosphere (S=Rgas/Rair). Values of R were determined through Van-der-Pauw method.X-ray and SEM investigation has allowed establishing the interconnection between technologic parameters, nanostructure and gas sensitive characteristics of obtained films.Gas sensitivity S of the deposited undoped films has amounted 9-10 relative units to the 100 ppm of hydrogen in air. Modification of gas sensitive properties of tin dioxide NDF through bulk and surface doping with Pd has allowed to increasing hydrogen sensitivity up to almost 104 rel. units, providing the detection of hydrogen at the concentration on the level 1 ppm and shift of the sensitivity maximum from 350°C (in the case of undoped films) to 150°C (Pd doped NDF).Performed sensor chip thermal regimes modeling has allowed developing of the NDFGS topology with reduced power consumption (< 30 mW).
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