Abstract
TiN films were deposited onto M2 steel using plasma-assisted chemical vapor deposition. TiCl 4, N 2 and H 2 were the reactant gases used at 1 Torr. A plasma was essential for TiN formation at 500 °C and below. At 500 °C, a highly crystalline stoichiometric TiN coating was formed with a (200) surface orientation and having a columnar zone 2 grain structure. At 400 °C, a zone T structure with an additional amorphous component was observed. Both types of films had good adherence with scratch adhesion critical loads comparable with values for sputtered TiN. The zone 2 films failed by cracking and occasional chipping within the coating. The zone T films failed by cracking in the coating and by chipping, within the coating and by the interface. Auger electron spectroscopy depth profiling of thin films indicates that the interface was sharp and no accumulation of chlorine is observed. Auger electron spectroscopy and scanning electron microscopy suggest that distinct TiN islands or nuclei were present in the early stages of growth. The use of an organometallic source, titanium tetrakis-(dimethylamide), resulted in the formation of carbonitride powders.
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