Abstract
Tin-based perovskite materials have shown great potential applications in environment-friendly optoelectronic devices. However, it is difficult to control the film growth process by solution method due to the rapid formation speed of the film. In this work, tin-based perovskite (FASnI3) films were prepared by chemical vapor deposition method. The film is mainly composed of thin nanoplates when the deposition temperature is 600 °C. The film shows good antioxidant properties by comparing the ratio between Sn4+ and Sn2+. Time-resolved fluorescence imaging measurements clearly reveal the fluorescence lifetime inhomogeneity in the film. The photodetectors based on tin-based perovskite films show good photo response properties, with a switching ratio of 808. This work provides new opportunities for non-lead perovskite thin film preparation and optoelectronic application.
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