Abstract

Sneak path current is a fundamental issue and a major roadblock to the wide application of memristor crossbar arrays [1]. Traditional selectors such as transistors compromise the 2D scalability and 3D stack-ability of the array, while emerging selectors with highly nonlinear current-voltage relations contradict the requirement of a linear current-voltage relation for efficient multiplication by directly using Ohm’s Law [2]. After reviewing some of the traditional two-terminal selectors [3], [4], I will talk about the concept of a timing selector (Fig. 1) we proposed [5], which addresses the sneak path issue with a voltage-dependent delay time of its transient switching behavior while preserves a linear current-voltage relationship for computation. We built crossbar arrays with silver-based diffusive memristors as the timing selectors and experimentally demonstrated the operation principle and operational windows (Fig. 2). The timing selector will enable large memristor crossbar arrays that can be used to solve large-dimension real-world problems in machine intelligence and neuromorphic computing.

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