Abstract
The electron populations of the intrinsic surface unoccupied state ( D down) and of the minimum of bulk conduction band (CBM) after fs-pulse excitation on the Si(0 0 1)-(2 × 1) surface were measured at two different excitation wavelengths ( λ ex) by means of time-resolved two-photon photoelectron spectroscopy. The decay of populations of both states is faster for short-wavelength excitation at 377 nm than that at 754 nm, showing a prominent λ ex-dependent decay in sub-ns temporal domain. In this temporal domain, the populations of both D down and CBM are proportional with each other. The results show that the decay of D down population is governed by the de-population of bulk electrons near surface via a short lifetime at the D down state.
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