Abstract
We show time-resolved measurement of Raman gain in Silicon submicron-size planar waveguide using picosecond pump and probe pulses. A net nonlinear gain of 6 dB is obtained in a 7-mm long waveguide with 20.7-W peak pump power. We demonstrate an ultrafast all-optical switch based on the free-carrier dispersion effect in the silicon waveguide, whose transmission is enhanced by more than 13 dB due to the Raman effect.
Highlights
Silicon can be an efficient medium to guide light in telecommunication wavelengths
Various optical devices have been fabricated on the SOI platform based on such nonlinearities, including electrooptic switch [6], all-optical switch [7], wavelength converter [8], and Raman amplifier [4]
We present a study of the Raman effect in Silicon waveguides using highly confined strip waveguides
Summary
Silicon can be an efficient medium to guide light in telecommunication wavelengths. Optical devices and waveguides have been fabricated on silicon-on-insulator (SOI) platform, showing compatibility with existing electronic technologies. Various optical devices have been fabricated on the SOI platform based on such nonlinearities, including electrooptic switch [6], all-optical switch [7], wavelength converter [8], and Raman amplifier [4]. Most of these devices are based on micron-size ridged waveguides with relatively large dimensions. We use a highly confined strip waveguide, for achieving large Raman gain. One application of Raman effect in Silicon is to enhance the transmission of nonlinear optical devices based on silicon. While an ultrafast switch based on similar principle has been demonstrated using semiconductor optical amplifier as the nonlinear media [9], to the best of our knowledge, this paper is the first demonstration of this type of switch on SOI platform
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