Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy

Abstract

Initial stages of 3C-SiC growth on Si using cracked C3H8 in gas source molecular beam epitaxy were studied using in situ reflection high-energy electron diffraction. Starting from a Si (001) clean surface showing a (2×1) structure, the surface structure changed in the order of Si(2×1) → structure of mixed Si(2×1) and Si c(4×4) → 3C-SiC with a continuous supply of cracked C3H8. An activation energy of 46.9 kcal/mol was obtained in the initial stage of 3C-SiC growth. After the appearance of 3C-SiC diffraction spots, island structures of 3C-SiC nuclei were observed using a high-resolution scanning electron microscope. Based on these results, growth mechanisms in the 3C-SiC/Si heteroepitaxial system are discussed.