Abstract
We report a time-resolved reflectance difference spectroscopy (RDS) study of the growth of InAs during alternating flow conditions typical of atomic layer epitaxy (ALE). The precursors used were trimethylindium (TMIn) and tertiarybutylarsine (TBAs). For ALE growth we observe that the InAs surface remains As-rich for an appreciable fraction of the 1 monolayer (ML) TMIn pulse. This is similar to results obtained for the growth of GaAs by ALE using trimethylgallium. Three distinct RDS spectra are observed, two corresponding to As-rich phases, and one which is In-rich. In both InAs and GaAs the extra As layer appears to play a key role in maintaining self-limiting behaviour.
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