Abstract
ABSTRACTEmploying three different active layer widths, aluminium gallium nitride-based double heterostructures have been grown on GaN template by metal–organic chemical vapour deposition. The crystalline quality of the heterostructures has been investigated using high-resolution X-ray diffraction analysis. Optical and decay time studies have been carried out using room-temperature photoluminescence and time-resolved photoluminescence, respectively. The interface recombination velocity (S) between active and barrier layers has been determined.
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