Abstract
Studies of the time decay and power dependence of bound-exciton and donor-acceptor pair (DAP) photoluminescence (PL) have been carried out in n-type undoped and Al-doped films of cubic SiC. The five PL lines or shoulders occuring about 8 meV below the five-line nitrogen-boundexciton PL spectrum exhibit a time decay characteristic of donorbound-excitons. A weak DAP PL is found to dominate the low power CW with binding energy larger than the well known 54 meV donor.KeywordsDeep DonorZero Phonon LinePhonon ReplicaDonor Binding EnergyNonstoichiometric DefectThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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