Abstract
Recombination dynamics in GaN-based layers have been studied by means of photoluminescence spectroscopy having spectral and spatial resolution. It was found that PL lifetime ( τ PL) of the epitaxially laterally overgrown GaN (ELO-GaN), which consists of the regions with high (window) and low (wing) threading dislocation density (DD), was dominated by the nonradiative recombination process at room temperature (RT), and that the τ PL measured at wing region (DD=10 6 cm −2) was 86 ps which is slightly larger than the value (70 ps) at window region (DD=10 8 cm −2). These indicate that threading dislocations limit hardly the emission efficiency even with these DD-levels, and that the device performance is mainly limited by other types of nonradiative recombination centers.
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