Abstract
Previous studies of time-resolved photoluminescence from GaAs/Al x Ga1− x As quantum well structures have examined material grown by molecular beam epitaxy. The large differences in behavior seen by different groups suggests a strong dependence of carrier dynamics on material. Until now, time-resolved photoluminescence from GaAs/Al x Ga1− x As quantum wells grown by metal-organic chemical vapor deposition (MOCVD) has not been extensively studied. We report data taken at temperatures from 16K to 300K and over a wide range of excitation densities on MOCVD quantum well structures. These structures were grown in a reactor which routinely produces high quality laser material, and exhibit high photoluminescence efficiency at room temperature.
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