Time-Resolved Photoluminescence Analysis of Multidose Si-Ion-Implanted SiO2

Abstract

The continuous-wave/time-resolved photoluminescence (CWPL/TRPL) and capacitance–voltage (C-V) analysis of multirecipe silicon-ion-implanted are demonstrated to study the lifetime evolution of three radiative defects with luminescent peaks at 415, 455, and , which are identified as the weak oxygen bonding (O–O) defects, neutral oxygen vacancy (NOV), and precursors of nanocrystallite Si defects, respectively. The TRPL analysis reveals that the concentrations of weak oxygen bonding and NOV defects with lifetimes of in as-implanted are , agreeing well with those determined using C-V analysis. The NOV and weak oxygen-bonding defects reach their maximum densities and the shortest emission lifetimes of and , respectively, after annealing for . These results support the dissociation of matrix during a Si-implanting process with a reaction of , which is the origin of the strong blue-green CWPL observed in the . The regrowth of matrix after long-term annealing is also confirmed by the significant reduction of NOV and weak oxygen bonding defects. In contrast, the concentration of the center reveals a slowly increasing trend due to the less pronounced precipitation of nanocrystallite Si in during the annealing process.