Abstract
The technique of femtosecond fluorescence up-conversion was employed to explore the transient photoluminescence and carrier decay dynamics in c-plane (In,Ga)N multi-quantum-well light emitting diodes over a wide bias range. By investigating the bias dependence of initial transient photoluminescence intensity and the luminescence lifetime, the field and carrier density effects on the radiative recombination coefficient were revealed for both low and high current injection conditions, and in good agreement with the theory.
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