Abstract
Time-resolved photoluminescence (PL) of dislocation-related features (D1–D4) was studied in strain-relaxed molecular beam epitaxy SiGe/Si(100). Low-temperature decay transients are essentially non-exponential for all D bands. The D1, D2 bands are characterized by long ( τ>200 ns) decay times while short ( τ<60 ns) decay times were observed for the D3, D4 bands. Radiative lifetimes as derived from measured decay times imply free-to-bound character of PL origins of the D1, D2 bands while bound-to-bound character for the D3, D4 bands.
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