Abstract
Intrinsic transport properties in diamond are remained frontiers in material research of semiconductors. Here, we apply the time-resolved cyclotron resonance (TRCR) method to dislocation-free HPHT diamonds in order to elucidate the momentum relaxation mechanisms of photoexcited carriers. Two specimens of single sector crystals oriented along [001] and [111] directions are examined. The both specimens show clear TRCR signals below 40K, where the signals in the (111)-oriented diamond decay faster than those in the (001)-oriented one. From the temperature dependence of the CR spectrum in the (111)-oriented diamond, carrier momentum relaxation rates at the low temperature limit are extracted. The rates are two/four times larger for heavy/light holes in the HPHT diamond than the previous results obtained in a high-purity CVD diamond, and include temperature-independent scattering by neutral impurities. We also deduce that the TRCR detection is rather insensitive to crystalline dislocations by considering the cyclotron radii of carriers.
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