Abstract
1/f noise and random telegraph signal (RTS) noise are increasingly dominant sources of low-frequency noise as the MOSFET enters the nanoscale regime. In this study, 1/f noise and RTS noise in the n-channel MOSFET are modelled in the time domain for efficient implementation in transient circuit simulation. A technique based on sum-of-sinusoids models 1/f noise while a Monte Carlo based technique is used to generate RTS noise. Low-frequency noise generated using these models exhibits the correct form of noise characteristics as predicted by theory, with noise parameters from standard 0.35-mum and 35-nm CMOS technology. Implementation of the time-domain model in SPICE shows the utility of the noisy MOSFET model in simulating the effect of low-frequency noise on the operation of deep-submicrometer analog integrated circuits.
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More From: IEEE Transactions on Circuits and Systems I: Regular Papers
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