Abstract

In this work, we investigate and explain the time-dependent behavior of shot noise in Silicon quantum dot-based double-tunnel junctions by means of a three-dimensional self-consistent simulation and a Monte-Carlo algorithm following the time evolution of the system. We demonstrate the strong link between autocorrelation functions and electron waiting time distributions, i.e, the time between two consecutive tunnel events through a given junction. Moreover, we separate and analyze the contribution of each different path - evolution of the number of electrons in the quantum dot between two consecutive tunnel events through the same junction - to understand clearly the behavior of auto-correlations and waiting time distributions in the case of a 3-state system.

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