Abstract
We use a multi-scale modeling framework to investigate time dependent dielectric breakdown (TDDB) distributions in SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> - and HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based stacks. We show that the low and thickness independent Weibull slope (β) observed in HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> is due to the high intrinsic defect density and to the spatial correlation of the defect generation process. We investigate the origin of the double slope observed on TDDB distributions in IL-HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> stacks: we have found that it is related to the stochastic nature of the bond-breakage process. This is important for a correct evaluation of the lifetime of logic devices.
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