Abstract
A time-decay resistive switching memory using a 3D vertical Pt/Ta2O5−x/W device architecture is demonstrated, in which horizontal W electrodes were fabricated, and vertical Pt electrodes was formed at the sidewall after oxide was deposited. Unlike conventional resistive switching, which usually form a conductive filament connect two electrodes, a weak conductive filament was formed from bottom electrode W to near top electrode Pt. The memory can be recovered with a time scale when the electrical stimulation is removed. However, different decay behaviors were observed in one decay curve, including rapid decay and slow decay processes. This can be a good simulation of different stages of forgetting. By a combination of the current decay fitting and the conductive analysis, the rapid decay and slow decay processes correspond to ion diffusion and electron detrapping, respectively.
Highlights
The ultimate scaling down of the CMOS architecture of modern von-Neumann computer has been plagued by a step known as the von-Neumann bottleneck both with more energy and space consumption
The development of nanoionic devices opened up new applications such as neuromorphic circuits and adaptive system that can mimic efficient artificial neural network in which logic circuits dynamically reconfigure in response to inputs[8,9,10,11,12,13,14,15,16]
Pt/Ta2O5−x/W structured devices were investigated in a vertical architecture that is much desired in high density integration[24,25,26,27,28,29,30], which makes the hardware implementation of neuromorphic networks with a comparable number of devices as human’s synapse number possible, and resistive switching properties in Pt/ Ta2O5 junctions in a forward potential applying to Pt was discovered
Summary
The ultimate scaling down of the CMOS architecture of modern von-Neumann computer has been plagued by a step known as the von-Neumann bottleneck both with more energy and space consumption. For Ta2O5, many reports have connected resistive switching in Pt/TaOx junctions in a negative potential applying to Pt with changes in the oxygen stoichiometry within a thin interfacial dead layer, corresponding to an electron depletion layer caused by the formation of a Schottky barrier. Pt/Ta2O5−x/W structured devices were investigated in a vertical architecture that is much desired in high density integration[24,25,26,27,28,29,30], which makes the hardware implementation of neuromorphic networks with a comparable number of devices as human’s synapse number possible, and resistive switching properties in Pt/ Ta2O5 junctions in a forward potential applying to Pt was discovered. By a combination of the current decay fitting and the conductive analysis, the rapid decay and slow decay processes correspond to ion diffusion and electron detrapping, respectively
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