Abstract
Decoherence of a shallow donor electron spin in silicon caused by electron-lattice interaction is studied. We find that there are two time scales associated with the evolution of the electron spin density matrix: the fast but incomplete decay due to the interaction with non-resonant phonons followed by slow relaxation resulting from spin flips accompanied by resonant phonon emission. We estimate both time scales as well as the magnitude of the initial drop of coherence for P donor in Si and argue that the approach used is suitable for evaluation of phonon induced decoherence for a general class of localized spin states in semiconductors.
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