Abstract
We have developed a time-resolved surface photoelectron spectroscopy system based on a 1.5 eV laser-pump and 92 eV high-order harmonic probe configuration that enables us to measure the electron and hole dynamics on a semiconductor surface. Core-level photoelectron spectra of GaAs(001) were successfully obtained with a single 59th harmonic, which was selected by using a pair of Mo/Si multilayer mirrors with a narrow reflection bandwidth. We observed transient energy shifts of the Ga 3d core level photoelectron peak of approximately 200 meV towards a higher binding energy, indicating that the surface potential changed due to the spatial separation of electron–hole pairs generated by the laser irradiation. The relatively slow recovery of the Ga 3d core level shift with a time constant of a few ns is dominated by the recombination process of the excess surface charges generated by the laser irradiation.
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