Abstract
AbstractWe report on time‐resolved photoluminescence studies of charge carrier dynamics in graded bandgap ZnCdxO (x=0‐60%) multilayers. Analysis of the spectral peak position and intensity under different excitation intensities and temperatures suggest excitonic origin of emission components forming a characteristic plateau in the region from 3.3 eV to 2.5 eV. The carrier recombination processes in ZnCdO alloys are found to be multi‐exponential with characteristic time constants spread from sub‐ nanosecond to microsecond time domains. Temperature dependencies of the radiative and non‐radiative recombination lifetime parameters have been extracted providing further evidence for the excitonic nature of the emission. Carrier dynamics in single and multilayer structures is compared and discussed in terms of surface and interface recombination also taking into account different photo‐generation profiles and their role in subsequent drift and diffusion processes. Generally lower lifetime and quantum efficiency parameters observed in multilayers suggest detrimental role of the interfaces in carrier relaxation process (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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