Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers

Abstract

The DC and RF electrical performance and reliability of GaN-based transistors depend on their thermal behavior. Therefore, measuring the self-heating temperature of these devices under real operating conditions with high accuracy is an important and challenging issue. For these reasons, we present a time-resolved thermometry technique to measure transient self-heating temperatures in semiconductor components by combining conventional Raman spectroscopy and CeO2 Raman micro-thermometers. Thus, the experimental GaN volumetric and surface self-heating temperatures measured for biased AlInN/GaN HEMTs in both DC and pulsed regime are reported with a submicrometer spatial resolution and a temperature resolution of about 5 °C. Likewise time-resolved self-heating temperature of drain contact surface has also been studied.