Abstract
Time resolved optical reflectivity (TRR) is a simple and elegant technique for dynamically monitoring the interface motion that occurs during crystallisation of thin films and amorphous layers on crystalline substrates. This in situ technique has enabled measurements of the solid-phase epitaxial regrowth rate of amorphous silicon layers produced by ion implantation to be extended by over five orders of magnitude to rates in excess of 10 6 Å/s [1]. TRR is also well suited to measurements of crystallisation kinetics in ion-implanted ceramic oxides. In the present work, the technique is used to directly monitor the regrowth during thermal annealing of amorphous layers produced by ion implantation in the crystalline ceramic oxide SrTiO 3. In particular, the effect of ambient water vapour on the epitaxial regrowth rate of amorphous layers in this material has been examined. This study provides new insight into the role of water in regrowth of materials of this nature and clearly illustrates the utility of TRR in measurements of crystallisation rates in ceramic oxides.
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