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Abstract
The deposition of diamond layers from CH4-H2 microwavedischarge operating in pulsed mode has been achieved. It has been shownthat the variation of the time parameters of the process (frequency andduty cycle) leads to noticeable modifications of the deposited layers.From plasma diagnostic measurements, the change in plasma composition hasbeen determined and correlated with the quality and growth rate of thediamond thin films. Particular attention has been paid to theconcentration of H-atoms, CH and C2 radicals and their evolution duringthe discharge regime and the afterglow. Indeed, these species are wellknown either as agents for graphite etching (H), or diamond precursors(CHx imaged by CH) or graphite precursors (C2Hx imaged by C2).Optimum values of the power pulse repetition rate (500 Hz) and duty cycle(50%) have been found which are correlated with the variation of therelative concentrations of H, CH and C2 with time, especially duringthe afterglow. It has been shown that these optimum conditions correspondto a minimization of C2 in the afterglow while H and CH concentrationsremain high enough to continue the diamond deposition process after thepower is switched off.
Published Version
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