Abstract
IC analysis can be facilitated using Time Resolved Photon Emission (TRE). Because recent technologies work at ultra low power supply voltages: <1V, background noise can mask commutation peaks thus biasing analyses. With a positive photon discrimination flow, signals can be extracted even below the noise level. However signal extraction depends on various parameters (e.g., bin size, cutoff frequency). WE have developed a photon discrimination technique to optimize these parameters. This technique is integrated into a generic method which takes advantage of static light emission acquisition for identifying switching transistors and which links TRE measurements to simulations for optimal IC diagnostics.
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