Abstract
Time-resolved photoluminescence (PL) spectra of porous Si have been investigated between 25 and 295 K. At high temperatures the PL band shows within a period of 110 μs after excitation a continuous redshift from 630 to 675 nm. In the ns-regime a rich fine structure of the PL band was observed. This could be decomposed into three peaks and their associated phonon replica with the 1100 cm -1 stretching mode of Si-O-Si. These peaks are located in the region of the predicted lowest exciton transitions of porous Si.
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