Abstract
Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs)embedded in an InGaAs quantum well (QW) are reported. A large blueshift of thephotoluminescence (PL) peak is observed with increased excitation densities. This blueshiftis due to the Coulomb interaction between physically separated electrons and holescharacteristic of the type-II band alignment, along with a band-filling effect of electrons inthe QW. Low-temperature (4 K) time-resolved PL measurements show a decay time of ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than thatof the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas ( ns).
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