Abstract
We have investigated the influence of postgrowth thermal annealing on the optical properties of InAs/GaAs self-assembled quantum dots. Upon annealing, the emission from InAs QDs shifts toward higher energies with a narrowing of the photoluminescence spectra of QD ensemble. The time-integrated PL spectra show also the nonradiative recombination rate does not increase by annealing process. In addition, from the timeresolved PL, the exciton radiative recombination rate increases with increasing the annealing temperature and agrees well with the atomic-like radiative recombination. These results indicate that interdiffusion of Ga and In atoms into and out of the QDs leads to an increase of the average dot size and concurrently a decrease in the confinement potentials of the QDs preserving their optical quality and zero-dimensional density of states after interdiffusion in the studied annealing temperature range. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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