Abstract
We demonstrate an innovative pump-probe technique for the determination of free carrier absorption, diffusivity, and internal quantum efficiency in Si. The internal quantum efficiencies for excitation by 800 nm, 400 nm, and 267 nm light are found to be 1.00, 1.00, and 1.25, respectively. The free carrier absorption cross section at 1510 nm is determined to be σFCA = 1.69 × 10−17 cm2 and an increased value is observed for high carrier concentrations. A model for free carrier diffusion and absorption is used to extract the relationship between σFCA and carrier concentration.
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