Abstract
The electroluminescence and conduction properties of organic light emitting devices (OLEDs) with Al q3 emissive layer and with Fe cathode were investigated. The relative luminescence intensity for the device became lower than that with Al cathode. Time resolved photoluminescence of Al q3 was measured to investigate the electronic state of the interface between Fe and Al q3 layer of OLEDs. The difference of luminescence intensities of OLEDs could not be explained only due to the work functions, but also due to the essential increase of quenching centers.
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