Abstract
Excitation profiles for the intensities of electronic Raman transitions between crystal field components of the 7F 6 and 7F 5 manifolds of terbium aluminum garnet are recorded for excitation in the spectral region where absorption bands due to levels of the 5D 4 manifold occur. The intensities of the electronic transitions are not enhanced which is thought to be caused by the small values of electric dipole matrix elements of the resonating electronic states in comparison to the values of such elements to other intermediate states which occur in the expression for the scattering tensor. Fluorescence from the 5D 4 levels is induced and resonance fluorescence are time resolved with respect to the Raman transitions. We report electronic Raman transitions excited with the 308.0 nm line of an XeCl excimer laser. As opposed to excitation with visible laser sources, transitions are recorded which terminate on all the crystal field levels of the 7F 5…0 levels. In addition, fluorescence from 5D 3 to the ground state of terbium aluminum garnet is also observed.
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