Abstract
We report the time resolved photoconductive response of natural and synthetic semiconducting diamond using nanosecond and picosecond laser pulses for 0.4 < δ <4.2 μm. For 0.45 < δ <1.1 μm both acceptor-valence band (A-V) and donor-acceptor (D-A) hole transitions contribute to the photoconductivity; only the former mechanism contributes for 1.1 < δ < 4.2 μm. The A-V recombination has been time resolved to have a characteristic time constant of approximately 150 psec giving a hole recombination cross section of 3 × 10-14cm2. The time resolution was accomplished using 1.06 μm, 20 psec pulses from a Nd:Yag laser in conjunction with an electrical autocorrelation technique. Laser-induced D-V transitions of holes via the acceptors is responsible for the second photoconductivity component; the A-D recombination occurs on a millisecond time scale with the photoconductivity decay being highly nonexponential. The potential use of semi-conducting diamond as an ultrafast infrared detector is briefly discussed.
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