Abstract
We demonstrate time-resolved measurements of carrier drag effect in modulation-doped n-type GaAs/AlGaAs quantum wells and edge wires by using a micro-photoluminescence measurement setup and a novel ultrafast and high repetition shutter camera. As well as we demonstrate time-resolved two-dimensional images of carrier drag effect, we found that the relaxation time of exciton–electron scattering and exciton–lattice scattering are very long in comparison with previous studies and theories. In addition, the relaxation times in the edge-wires is longer than those in the wells, probably resulting in high exciton mobility in the edge wires.
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