Abstract
We address the determination of the time resolution for the 100 μm 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to β particles from a 90Sr source is investigated for the detection of the minimum ionizing particles (MIPs). We study the influence of different reverse voltages, which correspond to different carrier velocities and device sizes, and how this correlates with the detector capacitance. We determine a time resolution (94 ± 1) ps for a 100 μm 4H-SiC PIN detector. A fast simulation software, termed RASER (RAdiation SEmiconductoR), is developed and validated by comparing the waveform obtained from simulated and measured data. The simulated time resolution is (73 ± 1) ps after considering the intrinsic leading contributions of the detector to time resolution.
Highlights
In the recent years, much attention has been devoted to seek the appropriate semiconductor material to be used in future particle colliders and nuclear reactors operating in harsh radiation environment (i.e., > 1017 neq/cm2) [1]
We developed a fast simulation software termed RASER [21] for applications with silicon carbide detectors, which was used in this study to reproduce measured data
The reference timing device is developed by the Institute of High Energy Physics (IHEP) of Chinese Academic Sciences and the Novel Device Laboratory (NDL) of Beijing Normal University [22–24]
Summary
Much attention has been devoted to seek the appropriate semiconductor material to be used in future particle colliders and nuclear reactors operating in harsh radiation environment (i.e., > 1017 neq/cm2) [1]. Concerning applications in high-energy physics, the detector’s response to the MIPs. FIGURE 1 | 5 × 5 mm 4H-SiC PIN sample developed in NJU (A) Photography and (B) cross section. Motivated by the abovementioned arguments, we here investigate the time resolution of the 4H-SiC PIN device using a 90Sr source for applications in high-energy physics experiments. The two devices both have a 100 μm high resistive active 4H-SiC epitaxy layer and 350 μm substrate, whereas the effective doping concentration is different: we have Neff (5 mm × 5 mm) = 5.2 × 1013 cm−3 and Neff (1.5 mm × 1.5 mm) = 2.7 × 1013 cm−3, respectively.
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